8 research outputs found
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Monolithic ultrasound fingerprint sensor.
This paper presents a 591×438-DPI ultrasonic fingerprint sensor. The sensor is based on a piezoelectric micromachined ultrasonic transducer (PMUT) array that is bonded at wafer-level to complementary metal oxide semiconductor (CMOS) signal processing electronics to produce a pulse-echo ultrasonic imager on a chip. To meet the 500-DPI standard for consumer fingerprint sensors, the PMUT pitch was reduced by approximately a factor of two relative to an earlier design. We conducted a systematic design study of the individual PMUT and array to achieve this scaling while maintaining a high fill-factor. The resulting 110×56-PMUT array, composed of 30×43-μm2 rectangular PMUTs, achieved a 51.7% fill-factor, three times greater than that of the previous design. Together with the custom CMOS ASIC, the sensor achieves 2 mV kPa-1 sensitivity, 15 kPa pressure output, 75 μm lateral resolution, and 150 μm axial resolution in a 4.6 mm×3.2 mm image. To the best of our knowledge, we have demonstrated the first MEMS ultrasonic fingerprint sensor capable of imaging epidermis and sub-surface layer fingerprints
Recommended from our members
Monolithic ultrasound fingerprint sensor.
This paper presents a 591×438-DPI ultrasonic fingerprint sensor. The sensor is based on a piezoelectric micromachined ultrasonic transducer (PMUT) array that is bonded at wafer-level to complementary metal oxide semiconductor (CMOS) signal processing electronics to produce a pulse-echo ultrasonic imager on a chip. To meet the 500-DPI standard for consumer fingerprint sensors, the PMUT pitch was reduced by approximately a factor of two relative to an earlier design. We conducted a systematic design study of the individual PMUT and array to achieve this scaling while maintaining a high fill-factor. The resulting 110×56-PMUT array, composed of 30×43-μm2 rectangular PMUTs, achieved a 51.7% fill-factor, three times greater than that of the previous design. Together with the custom CMOS ASIC, the sensor achieves 2 mV kPa-1 sensitivity, 15 kPa pressure output, 75 μm lateral resolution, and 150 μm axial resolution in a 4.6 mm×3.2 mm image. To the best of our knowledge, we have demonstrated the first MEMS ultrasonic fingerprint sensor capable of imaging epidermis and sub-surface layer fingerprints
A 164-μW 915-MHz sub-sampling phase-tracking zero-IF receiver with 5-Mb/s data rate for short-range applications
This article presents a 915-MHz ultra-low-power (ULP) sub-sampling phase-tracking receiver (SSPT-RX). It is targeted for the power-constrained devices that need short range but medium high-speed data receiving, such as the multi-channel neural stimulator with arbitrary waveform generation. The zero-intermediate frequency (zero-IF) phase-tracking receiver (PT-RX) topology is adopted to simplify the sub-sampling RX architecture with direct demodulation of frequency-shift keying (FSK) signal while improving the image frequency issue. The frequency of local oscillator (LO) is reduced by ten times with the proposed architecture, which leads to greatly reduced power consumption. Fabricated in 65-nm CMOS process, the RX chip occupies an active area of 0.58 mm2. The RX consumes one of the lowest power consumptions of 164 μW from 0.5-/1-V supplies. It achieves an energy efficiency of 32.8 pJ/bit at a data rate of 5 Mb/s, which is improved by ∼5.6× compared to the stateof- the-art RXs. The measured sensitivity of 915-MHz FSK signal receiving is -69.5 dBm with an LO frequency of 91.5 MHz, which is 1/10 of the carrier frequency. The achieved RX sensitivity figure-of-merit (FoM) is 174.3 dB.Agency for Science, Technology and Research (A*STAR)This work was supported in part by “Nanosystems at the Edge” through the Singapore A∗STAR SERC AME Program under Grant A18A4b0055, in part by the Minister of Science and Technology, China, through the National Science and Technology Major Project under Grant 2018AAA0103100, in part by the National Natural Science Foundation of China under Contract 61661166010, and the in part by the Shenzhen Science and Technology Program under Grant JCYJ20180306170435280